c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . WFF10N60 WFF10N60 WFF10N60 WFF10N60 rev.a sep.2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 10a,600v,r ds(on) (max 0.75 ? )@v gs =10v ? ultra-low gate charge(typical 34nc) ? fast switching capability ? 100%avalanche tested ? isolation voltage(v iso =4000v ac) ? improved dv/dt capability general description this power mosfet is produced using winsemi's advanced planar stripe, v dmos technology. this latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch mode power supplies , power factor correction, ups and a electronic lamp ballast base on half bridge. absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 10 * a continuous drain current(@tc=100 ) 6.0* a i dm drain current pulsed (note1) 40* a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 713 mj e ar repetitive avalanche energy (note1) 18 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 50 w derating factor above 25 0.4 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 * drain current limited by maximum junction temperature thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 2.5 /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance WFF10N60 WFF10N60 WFF10N60 WFF10N60 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 600 v,v gs =0v - - 1 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 600 - - v gate threshold voltage v gs(th) v ds =10v,i d =250 a 3 - 4.5 v drain -source on resistance r ds(on) v gs =10v,i d = 4.75 a - 0.66 0.75 ? forward transconductance gfs v ds =50v,i d =4.75a - 8.2 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 1610 2065 pf reverse transfer capacitance c rss - 19 25 output capacitance c oss - 156 210 switching time rise time tr v dd = 300 v, i d = 10 a r g = 25 ? (note4,5) - 68 91 ns turn-on time ton - 109 150 fall time tf - 214 300 turn-off time toff - 85 165 total gate charge(gate-source plus gate-drain) qg v dd = 480 v , v gs =10v, i d = 10 a (note 4 ,5) - 34 45 nc gate-source charge qgs - 6.9 - gate-drain("miller") charge qgd - 12 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 10 a pulse drain reverse current i drp - - - 38 a forward voltage(diode) v dsf i dr = 10 a,v gs =0v - 1.05 1.4 v reverse recovery time trr i dr = 10 a,v gs =0v , di dr / dt =100 a / s - 442 633 ns reverse recovery charge qrr - 2.16 3.24 c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 14.5m h i as = 10 a,v dd = 50 v, r g =0 ? ,starting t j =25 3.i sd 10 a,di/dt 300 a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance WFF10N60 WFF10N60 WFF10N60 WFF10N60 3 / 7 fig.1 on-state cha ra cteristics fig.2 transfer characteristics fig.3 capacitance variation vs drain voltage fig.4 on-resistance variation energy vs drain current and gate voltage fig.5 on-resistance variation vs junction temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance WFF10N60 WFF10N60 WFF10N60 WFF10N60 4 / 7 fig.7 maximum safe operation area fig.8 diode forward voltage variation vs source current and temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance WFF10N60 WFF10N60 WFF10N60 WFF10N60 5 / 7 fig.10 gate test circuit & waveform fig.11 r esistive switching test circuit & waveform fig.12 uncamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance WFF10N60 WFF10N60 WFF10N60 WFF10N60 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance WFF10N60 WFF10N60 WFF10N60 WFF10N60 7 / 7 to-220f to-220f to-220f to-220f package package package package dimension dimension dimension dimension unit:mm
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